Microstereolithography of lead zirconate titanate thick film on silicon substrate

Ž . Ž . The microstereolithography mSL of lead zirconate titanate PZT thick films on platinum-buffered silicon substrates is reported for Ž . the first time in this paper. Crack-free PZT thick films 80–130 mm thick have been fabricated by laser direct-write UV polymerization from the HDDA-based UV curable PZT suspensions. The characterization of the fired films shows dielectric permittivities of 120–200, 2 Ž . tangent loss of 0.92–2.5% and remnant polarization of 0.9–1.7 mCrcm . The field-induced longitudinal piezoelectric coefficient d of 33 Ž . y3 an 84-mm thick film is 100 pCrN and the piezoelectric voltage coefficient g is about 59.5=10 V mrN. These results 33 demonstrated the potential for mSL of advanced piezoelectric microsensors and microactuators. q 2000 Elsevier Science B.V. All rights reserved.